General Purpose Transistors(NPN Silicon), 2N3904 datasheet, 2N3904 circuit, 2N3904 data sheet : ONSEMI, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Order today, ships today. 2N3904-AP – Bipolar (BJT) Transistor NPN 40V 200mA 250MHz 600mW Through Hole TO-92 from Micro Commercial Co. Pricing and Availability on millions of electronic components from Digi-Key Electronics. 2N3904 / MMBT3904 / PZT3904. Typical Characteristics. Base-Emitter ON Voltage vs Collector Current. 0.1 1 10 100 0.2 0.4 0.6 0.8 1 V - BASE-EMITTER ON VOLTAGE (V) I - COLLECTOR CURRENT (mA) N) C. V = 5V. CE 25 °C 125 °C - 40 °C. NPN General Purpose Amplifier (continued) Base-Emitter Saturation Voltage vs Collector Current . 0.1 1 10 100 0.4 0.6 0.8 1

2n3904 [Old version datasheet] Medium Integrated Power Solution Using a Dual DC/DC Converter and an LDO [Old version datasheet] High-Integration, High-Efficiency Power Solution Using DC/DC Converters With DVFS The 2N3904 is used very frequently in hobby electronics projects, including home-made ham radios, code-practice oscillators and as an interfacing device for microcontrollers . The 2N3904 is used very frequently in hobby electronics projects, including home-made ham radios, code-practice oscillators and as an interfacing device for microcontrollers .

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Text: transistor 2N3904 The W83L785R can alternate the thermistor to Pentium IITM (Deschutes) thermal diode interface or TM transistor 2N3904 and the circuit connection is shown as Figure 4. The pin of Pentium II D , =3300pF should be added to filter the high frequency noise. The transistor 2N3904 should be

It is a little more powerful than the 2n3904. Most likely the current gain is less, and and maybe also the maximal voltages. Depending on your application that may be OK, which is quite likely if it is not too demanding. The correct thing would for you to check the numbers in the data sheet. 2N3904 Package Type : TO-92 Plastic-encapsulate Bipolar Transistor, PC : 600mW, Vceo : 40V, ic : Features. Through Hole Package Capable 600mWatts of Power Dissipation. Symbol Parameter Collector-Emitter Breakdown Voltage* C=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10µ Adc, IE=0) Emitter-Base Breakdown Voltage (I E=10µ Adc, MMBT3904 Document number: DS30036 Rev. 25 - 2 © 1 of 7 www.diodes.com March 2017 Diodes Incorporated MMBT3904 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 2N3904 MMBT390 4 MMPQ390 4 PZT3904 NPN General Purpose Amplifier This device is designed as a general purpose amplif ier and switch. The useful dynamic range extends to 100 mA as a swi tch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* TA = 25°C unless otherwise noted 2N3904 Transistor and Specifications. 2N3904 Datasheet. 2N3904 Circuits. The 2N3904 is common general-purpose low-power NPN transistor used amplifying or switching applications. It is typically used for low-current, medium voltage, and moderate speed purposes.

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Data Sheet (current) [683 KB ] ST MICRO [69 KB ] ... TRANSISTOR, 2N3904, NPN GENERAL PURPOSE, SMALL SIGNAL, 40V, TO-92 For more about Transistors, click here. 2N3904 Package Type : TO-92 Plastic-encapsulate Bipolar Transistor, PC : 600mW, Vceo : 40V, ic : Features. Through Hole Package Capable 600mWatts of Power Dissipation. Symbol Parameter Collector-Emitter Breakdown Voltage* C=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10µ Adc, IE=0) Emitter-Base Breakdown Voltage (I E=10µ Adc, 2N3905 Datasheet (PDF) 1.1. 2n3905 2n3906.pdf Size:199K _motorola. MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3905/D General Purpose Transistors 2N3905 PNP Silicon * 2N3906 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit CASE 2904, STYLE 1 CollectorEmitter Voltage VCEO 40 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 40 ... 2n3904 [Old version datasheet] Medium Integrated Power Solution Using a Dual DC/DC Converter and an LDO [Old version datasheet] High-Integration, High-Efficiency Power Solution Using DC/DC Converters With DVFS NXP Semiconductors Product data sheet NPN switching transistor MMBT3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices.

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2N3904 datasheet, 2N3904 datasheets, 2N3904 pdf, 2N3904 circuit : ONSEMI - General Purpose Transistors(NPN Silicon) ,alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. 2N3904 MMBT390 4 MMPQ390 4 PZT3904 NPN General Purpose Amplifier This device is designed as a general purpose amplif ier and switch. The useful dynamic range extends to 100 mA as a swi tch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* TA = 25°C unless otherwise noted It is a little more powerful than the 2n3904. Most likely the current gain is less, and and maybe also the maximal voltages. Depending on your application that may be OK, which is quite likely if it is not too demanding. The correct thing would for you to check the numbers in the data sheet.