datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors. D2012 2SD2012 Components datasheet pdf data sheet FREE from Datasheet4U.com Datasheet (data sheet) search for integrated circuits (ic), semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDTO-220F Plastic-Encapsulate Transistors2SD2012TRANSISTOR (NPN)FEATURESAudio frequency power amplifier applicationsHigh DC current gainLow saturation voltageHigh power dissipationMAXIMUM RATINGS (TA=25 datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors. · Prompt Responsiveness · Guaranteed Quality · Global Access · Supply Chain Solution Worldway, the world's largest source of Hard-To-Find parts. We are offering 2SD2012(F) for competitive price in the global market, please send us a quota request for pricing.

2SD2012 offered from PCB Electronics Supply Chain shipps same day. 2SD2012, Transistors - Bipolar (BJT) - Single, TRANS NPN 60V 3A TO-220F 2SD2012G Datasheet (PDF) 3.1. 2sd2012 2.pdf Size:126K _st. 2SD2012 NPN SILICON POWER TRANSISTOR HIGH DC CURRENT GAIN LOW SATURATION VOLTAGE INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS GENERAL PURPOSE POWER AMPLIFIERS GENERAL PURPOSE SWITCHING 3 DESCRIPTION 2 1 The 2SD2012 is a silicon NPN power transistor housed in TO-220F insulated package. Oct 17, 2018 · Transistor NPN 60V 3A 25W 9MHz TO – EUR : – Online shopping. Shenzhen 2sd2012 Electronics Co. Shenzhen Lingcheng E-Business Department. 2sd2012 the seller – opens in a new window or tab and request a postage method to your location. Npn Triple Diffused Type View larger image. Nov 07, 2018 · D2012 Datasheet - Vcbo=60V, NPN Transistor - Toshiba, 2SD2012 datasheet, D2012 pdf, D2012 pinout, D2012 manual, D2012 schematic, D2012 equivalent.

2SD2012 datasheet, 2SD2012 pdf, 2SD2012 data sheet, datasheet, data sheet, pdf ... 2SD2012: TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. AUDIO FREQUENCY POWER ... Sep 08, 2018 · 2SD2012 – 2SD2012 NPN Power Transistor Delivery time is estimated using our proprietary method 2sf2012 2sd2012 based on the buyer’s proximity to the item location, the postage service 2sd2012, the seller’s postage history, and other factors. datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors. 2SD313 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER! Complement to 2SB507 TO-220 ABSOLUTE MAXIMUM RATINGS (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25oC) Junction Temperature Storage Temperature VCBO VCEO ... 2SD2012 Bipolar Transistors - BJT are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for 2SD2012 Bipolar Transistors - BJT.

The 2SD2061 transistor might have a current gain anywhere between 100 and 320.The gain of the 2SD2061E will be in the range from 100 to 200, 2SD2061F ranges from 160 to 320.

TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Order today, ships today. 2SD2012 – Bipolar (BJT) Transistor NPN 60V 3A 3MHz 25W Through Hole TO-220F from STMicroelectronics. Pricing and Availability on millions of electronic components from Digi-Key Electronics. 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • High power dissipation: PC = 25 W (Tc = 25°C) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage 2SD2012 Datasheet Customers are responsible for complying with safety standards and for datasheft adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption.

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The 2SD2061 transistor might have a current gain anywhere between 100 and 320.The gain of the 2SD2061E will be in the range from 100 to 200, 2SD2061F ranges from 160 to 320. 2SD2012 datasheet, 2SD2012 pdf, 2SD2012 data sheet, datasheet, data sheet, pdf ... 2SD2012: TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. AUDIO FREQUENCY POWER ...

2sd2012 transistor datasheet

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2SD2012, 2SD2012 Datasheet, 2SD2012 NPN Audio Power Transistor Datasheet, buy 2SD2012 Transistor 2SD2012 : NPN SILICON POWER TRANSISTOR STMicroelectronics. Your require pages is cannot open by blow Reason : Connect this pages through directly deep link alldatasheet.com is Free datasheet search site. You can use All semiconductor datasheet in Alldatasheet, by No Fee and No register. If you have any questions about using to our site,... Silicon NPN Power Transistors 2SD2058 DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage: VCE(SAT)=1.0V(Max) at IC=2A,IB=0.2A ·Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS ·With general purpose applications PINNING PIN DESCRIPTION 1Base 2 Collector 3 Emitter Add To Cart to Calculate Shipping. D2012 NTE Equivalent NTE54 NPN audio power amplif... Qty On Hand: 1 2SD2012, 2SD2012 Datasheet, 2SD2012 NPN Audio Power Transistor Datasheet, buy 2SD2012 Transistor